Title :
Enhancement of Program Speed in Dopant-Segregated Schottky-Barrier (DSSB) FinFET SONOS for NAND-Type Flash Memory
Author :
Choi, Sung-Jin ; Han, Jin-Woo ; Kim, Sungho ; Jang, Moon-Gyu ; Kim, Jin Soo ; Kim, Kwang Hee ; Lee, Gi Sung ; Oh, Jae Sub ; Song, Myeong Ho ; Park, Yun Chang ; Kim, Jeoung Woo ; Choi, Yang-Kyu
Author_Institution :
Sch. of Electr. Eng. & Comput. Sci., Korea Adv. Inst. of Sci. & Technol., Daejeon
Abstract :
A dopant-segregated (DS) Schottky-barrier (DSSB) FinFET SONOS for NAND flash memory with a proposed architecture is demonstrated for the first time. A DSSB technique with a nickel-silicided source/drain (S/D) is integrated in the FinFET with a 30-50-nm range of fin width. Compared with the conventional FinFET SONOS, the DSSB FinFET SONOS boasts very fast programming time with low voltage. For a programming state, hot electrons triggered by sharp band bending at the DS S/D region are used. As a result, a threshold voltage (V th) shift of 4.5 V is achieved in a fast programming time of 100 ns.
Keywords :
MOSFET; Schottky barriers; flash memories; FinFET SONOS; NAND-type flash memory; distance 30 nm to 50 nm; dopant-segregated Schottky-barrier; program speed; silicon-oxide-nitride-oxide-silicon; time 100 ns; voltage 4.5 V; Dopant segregated (DS); FinFET; Flash memory; NAND Flash; SONOS memory; Schottky-barrier MOSFET; hot electrons; nonvolatile memory; silicon–oxide–nitride–oxide–silicon (SONOS); silicon–oxide–nitride–oxide–silicon (SONOS);
Journal_Title :
Electron Device Letters, IEEE
Conference_Location :
12/9/2008 12:00:00 AM
DOI :
10.1109/LED.2008.2008667
