1.3 μm strained MQW AlGaInAs and InGaAsP ridge-waveguide lasers-a comparative study

Author

Silva, M. T Camargo ; Sih, J.P. ; Chou, T.M. ; Kirk, J.K. ; Evans, G.A. ; Butler, J.K.

Author_Institution

Barretos Inst. of Technol., Brazil

Volume

1

fYear

1999

fDate

1999

Firstpage

10

Abstract

Strained multiple quantum wells (MQW) AlGaInAs and InGaAsP ridge-guide lasers operating at 1.3 μm are fabricated by using the same process. The comparative investigation shows that AlGaInAs lasers present superior performance in relation to InGaAsP lasers. The characteristic temperature T₀ for the AlGaInAs lasers, ~100 K, is twice that of the InGaAsP lasers, ~500 K, resulting in substantially lower threshold currents, ~34 mA compared to ~56 mA at 85°C. The modulation bandwidth of AlGaInAs lasers is higher than that of the InGaAsP lasers

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; quantum well lasers; ridge waveguides; waveguide lasers; 1.3 micron; 85 C; AlGaInAs; InGaAsP; characteristic temperature; modulation bandwidth; strained multiple quantum well ridge waveguide laser; threshold current; Carrier confinement; Fiber lasers; Indium phosphide; Laser modes; Laser theory; Quantum well devices; Quantum well lasers; Refractive index; Semiconductor lasers; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Optoelectronics Conference, 1999. SBMO/IEEE MTT-S, APS and LEOS - IMOC '99. International

Conference_Location

Rio de Janeiro

Print_ISBN

0-7803-5807-4

Type

conf

DOI

10.1109/IMOC.1999.867027

Filename

867027