Title :
1.3 μm strained MQW AlGaInAs and InGaAsP ridge-waveguide lasers-a comparative study
Author :
Silva, M. T Camargo ; Sih, J.P. ; Chou, T.M. ; Kirk, J.K. ; Evans, G.A. ; Butler, J.K.
Author_Institution :
Barretos Inst. of Technol., Brazil
Abstract :
Strained multiple quantum wells (MQW) AlGaInAs and InGaAsP ridge-guide lasers operating at 1.3 μm are fabricated by using the same process. The comparative investigation shows that AlGaInAs lasers present superior performance in relation to InGaAsP lasers. The characteristic temperature T0 for the AlGaInAs lasers, ~100 K, is twice that of the InGaAsP lasers, ~500 K, resulting in substantially lower threshold currents, ~34 mA compared to ~56 mA at 85°C. The modulation bandwidth of AlGaInAs lasers is higher than that of the InGaAsP lasers
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; quantum well lasers; ridge waveguides; waveguide lasers; 1.3 micron; 85 C; AlGaInAs; InGaAsP; characteristic temperature; modulation bandwidth; strained multiple quantum well ridge waveguide laser; threshold current; Carrier confinement; Fiber lasers; Indium phosphide; Laser modes; Laser theory; Quantum well devices; Quantum well lasers; Refractive index; Semiconductor lasers; Temperature;
Conference_Titel :
Microwave and Optoelectronics Conference, 1999. SBMO/IEEE MTT-S, APS and LEOS - IMOC '99. International
Conference_Location :
Rio de Janeiro
Print_ISBN :
0-7803-5807-4
DOI :
10.1109/IMOC.1999.867027
