Title :
Self-Stabilization in Amorphous Silicon Circuits
Author :
Sambandan, Sanjiv ; Street, Robert A.
Author_Institution :
Palo Alto Res. Center, Palo Alto, CA
Abstract :
Thin-film transistors (TFTs) based on disordered semiconductors such as amorphous hydrogenated silicon (a-Si:H) experience a threshold voltage (VT) shift with time in the presence of a gate bias. The VT shift needs to be compensated for circuit applications. We study an interesting property of self-compensation in fundamental analog TFT circuits with one a part of the circuit compensating for the effects of VT shift in the other and vice versa.
Keywords :
amorphous semiconductors; elemental semiconductors; silicon; stability; thin film transistors; Si; amorphous hydrogenated silicon; amorphous silicon circuits; disordered semiconductors; gate bias; self-stabilization; thin-film transistors; threshold voltage shift; Amorphous silicon; circuit; organic; threshold voltage (VT);
Journal_Title :
Electron Device Letters, IEEE
Conference_Location :
12/9/2008 12:00:00 AM
DOI :
10.1109/LED.2008.2009010
