• DocumentCode
    3559410
  • Title

    Self-Stabilization in Amorphous Silicon Circuits

  • Author

    Sambandan, Sanjiv ; Street, Robert A.

  • Author_Institution
    Palo Alto Res. Center, Palo Alto, CA
  • Volume
    30
  • Issue
    1
  • fYear
    2009
  • Firstpage
    45
  • Lastpage
    47
  • Abstract
    Thin-film transistors (TFTs) based on disordered semiconductors such as amorphous hydrogenated silicon (a-Si:H) experience a threshold voltage (VT) shift with time in the presence of a gate bias. The VT shift needs to be compensated for circuit applications. We study an interesting property of self-compensation in fundamental analog TFT circuits with one a part of the circuit compensating for the effects of VT shift in the other and vice versa.
  • Keywords
    amorphous semiconductors; elemental semiconductors; silicon; stability; thin film transistors; Si; amorphous hydrogenated silicon; amorphous silicon circuits; disordered semiconductors; gate bias; self-stabilization; thin-film transistors; threshold voltage shift; Amorphous silicon; circuit; organic; threshold voltage (VT);
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • Conference_Location
    12/9/2008 12:00:00 AM
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2008.2009010
  • Filename
    4703293
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3559410