On the design of a wide-dynamic range GaAs preamplifier IC for photonic links

Author

Bendé, André Boyoguéno

Author_Institution

Dept. of Electr. Eng., Ecole Polytech. de Montreal, Que., Canada

Volume

1

fYear

1999

fDate

1999

Firstpage

96

Abstract

This paper discusses ongoing experimental research involving the design of novel architectures applicable to high-speed non-regenerated systems insensitive to parasitic effects, characterization and modeling of the noise performance in GaAs MESFET RF devices used in short-haul transmissions and wireless applications. Three major design concerns are the noise figure of the low-noise amplifier (LNA), the dynamic range of the receiver circuit and the link performance which is strongly dependent on both the sensitivity and the dynamic range

Keywords

III-V semiconductors; MESFET integrated circuits; gallium arsenide; integrated circuit noise; optical receivers; preamplifiers; wideband amplifiers; GaAs; GaAs preamplifier IC; MESFET RF device; design; dynamic range; high-speed nonregenerated system; low noise amplifier; noise figure; optical receiver; photonic link; short-haul transmission; transimpedance amplifier; Broadband amplifiers; Dynamic range; Frequency; Gallium arsenide; Low-noise amplifiers; Optical amplifiers; Optical feedback; Optical signal processing; Photonic integrated circuits; Preamplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Optoelectronics Conference, 1999. SBMO/IEEE MTT-S, APS and LEOS - IMOC '99. International

Conference_Location

Rio de Janeiro

Print_ISBN

0-7803-5807-4

Type

conf

DOI

10.1109/IMOC.1999.867061

Filename

867061