DocumentCode :
3559521
Title :
Measuring Frequency Response of a Single-Walled Carbon Nanotube Common-Source Amplifier
Author :
Amlani, Islamshah ; Lee, King F. ; Deng, Jie ; Wong, H. S Philip
Author_Institution :
Appl. Res. & Technol. Center, Tempe, AZ
Volume :
8
Issue :
2
fYear :
2009
fDate :
3/1/2009 12:00:00 AM
Firstpage :
226
Lastpage :
233
Abstract :
Frequency response function (FRF) showing ac gain from a single-walled carbon nanotube transistor is presented. A top-gated carbon nanotube FET (CNFET) is configured as a common-source amplifier and the FRF of the amplifier is measured. Evidence of unambiguous signal amplification is observed in time domain as well as frequency domain up to a unity voltage gain frequency of approximately 560 kHz. The observed roll-off in frequency is solely due to the RC time constant of the measurement apparatus. A specifically designed circuit-compatible SPICE model for the CNFET is used to model both dc and ac characteristic with the same set of physical parameters. Good agreement between measurement and simulation is obtained. For a device without the parasitic load capacitance, we predict an intrinsic unity voltage gain frequency of 29 GHz and a cutoff frequency of ~ 50 GHz.
Keywords :
amplifiers; carbon nanotubes; field effect transistors; frequency response; nanotube devices; semiconductor device models; C; SPICE model; common-source amplifier; cutoff frequency; frequency 29 GHz; frequency response function; parasitic load capacitance; single-walled carbon nanotube transistor; top-gated carbon nanotube FET; unity voltage gain frequency; Amplifier; carbon nanotube FET (CNFET); frequency response function (FRF); modeling; simulation;
fLanguage :
English
Journal_Title :
Nanotechnology, IEEE Transactions on
Publisher :
ieee
Conference_Location :
12/12/2008 12:00:00 AM
ISSN :
1536-125X
Type :
jour
DOI :
10.1109/TNANO.2008.2010883
Filename :
4711100
Link To Document :
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