Field effect transistor with 170 nm gate fabricated by atomic force lithography

Author

Panepucci, Roberto R. ; Bettini, Jefferson ; Cotta, Mônica A. ; Carvalho, Mauro M G

Author_Institution

Lab. de Pesavisa em Dispositivos, UNICAMP, Brazil

Volume

1

fYear

1999

fDate

1999

Firstpage

105

Abstract

High-speed FETs require the ability to fabricate fine metallic lines for short-gate-length devices. In this work, an atomic force microscope was used to pattern narrow lines in resist for gate definition. Subsequent processes were used to fabricate the metallic gate structure in an epitaxial GaAs metal-semiconductor field effect transistor. All fabrication steps were carried out in our laboratories, including crystal growth. An operational transistor with a 170 nm-gate length was achieved

Keywords

III-V semiconductors; Schottky gate field effect transistors; atomic force microscopy; gallium arsenide; lithography; microwave field effect transistors; semiconductor device metallisation; semiconductor epitaxial layers; 170 nm; GaAs; atomic force microscope lithography; crystal growth; epitaxial GaAs MESFET; fabrication; field effect transistor; high-speed semiconductor device; metallic gate; Atomic force microscopy; Etching; FETs; Fabrication; Gallium arsenide; Laboratories; Lithography; MESFETs; Ohmic contacts; Resists;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Optoelectronics Conference, 1999. SBMO/IEEE MTT-S, APS and LEOS - IMOC '99. International

Conference_Location

Rio de Janeiro

Print_ISBN

0-7803-5807-4

Type

conf

DOI

10.1109/IMOC.1999.867063

Filename

867063