Title :
Field effect transistor with 170 nm gate fabricated by atomic force lithography
Author :
Panepucci, Roberto R. ; Bettini, Jefferson ; Cotta, Mônica A. ; Carvalho, Mauro M G
Author_Institution :
Lab. de Pesavisa em Dispositivos, UNICAMP, Brazil
Abstract :
High-speed FETs require the ability to fabricate fine metallic lines for short-gate-length devices. In this work, an atomic force microscope was used to pattern narrow lines in resist for gate definition. Subsequent processes were used to fabricate the metallic gate structure in an epitaxial GaAs metal-semiconductor field effect transistor. All fabrication steps were carried out in our laboratories, including crystal growth. An operational transistor with a 170 nm-gate length was achieved
Keywords :
III-V semiconductors; Schottky gate field effect transistors; atomic force microscopy; gallium arsenide; lithography; microwave field effect transistors; semiconductor device metallisation; semiconductor epitaxial layers; 170 nm; GaAs; atomic force microscope lithography; crystal growth; epitaxial GaAs MESFET; fabrication; field effect transistor; high-speed semiconductor device; metallic gate; Atomic force microscopy; Etching; FETs; Fabrication; Gallium arsenide; Laboratories; Lithography; MESFETs; Ohmic contacts; Resists;
Conference_Titel :
Microwave and Optoelectronics Conference, 1999. SBMO/IEEE MTT-S, APS and LEOS - IMOC '99. International
Conference_Location :
Rio de Janeiro
Print_ISBN :
0-7803-5807-4
DOI :
10.1109/IMOC.1999.867063
