A Comparative NBTI Study of $\hbox {HfO}_{2}$ , $\hbox {HfSiO}_{x}$ , and SiON p-MOSFETs Using UF

The time, temperature, and oxide-field dependence of negative-bias temperature instability is studied in HfO₂/TiN, HfSiO_x/TiN, and SiON/poly-Si p-MOSFETs using ultrafast on-the-flyI _DLIN technique capable of providing measured degradation from very short (approximately microseconds) to long stress time. Similar to rapid thermal nitrided oxide (RTNO) SiON, HfO₂ devices show very high temperature-independent degradation at short (submilliseconds) stress time, not observed for plasma nitrided oxide (PNO) SiON and HfSiO_x devices. HfSiO_x shows lower overall degradation, higher long-time power-law exponent, field acceleration, and temperature activation as compared to HfO₂, which are similar to the differences between PNO and RTNO SiON devices, respectively. The difference between HfSiO_x and HfO₂ can be attributed to differences in N density in the SiO₂ IL of these devices.