Title :
Monolithic GaAs PHEMT MMICs integrated with high performance MEMS microrelays
Author :
Sovero, E.A. ; Mihailovich, R. ; Deakin, D.S. ; Higgins, J.A. ; Yao, J.J. ; DeNatale, J.F. ; Hong, J.H.
Author_Institution :
Rockwell Inst. Sci. Center, Thousand Oaks, CA, USA
Abstract :
We report the successful integration of MEMS microrelays with PHEMT MMIC in a single monolithic structure. The process we describe here allows us to build MEMS microrelays along GaAs PHEMT devices without any sacrifice in performance or yield to either device. The test structure used the switches to activate one of two X-band LNAs. The switches have an insertion loss of less than 0.3 dB up to 50 GHz while the LNAs have a gain of 20 dB and 1.1 dB NF at 9 GHz
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; field effect MMIC; gallium arsenide; micromachining; micromechanical devices; microwave switches; 0.3 dB; 1.1 dB; 20 dB; 50 GHz; 9 GHz; GaAs; GaAs PHEMT MMICs; X-band LNAs; high performance MEMS microrelays; insertion loss; single monolithic structure; Gain; Gallium arsenide; Insertion loss; MMICs; Micromechanical devices; Microrelays; Noise measurement; PHEMTs; Switches; Testing;
Conference_Titel :
Microwave and Optoelectronics Conference, 1999. SBMO/IEEE MTT-S, APS and LEOS - IMOC '99. International
Conference_Location :
Rio de Janeiro
Print_ISBN :
0-7803-5807-4
DOI :
10.1109/IMOC.1999.867103
