Monolithic GaAs PHEMT MMICs integrated with high performance MEMS microrelays

Author

Sovero, E.A. ; Mihailovich, R. ; Deakin, D.S. ; Higgins, J.A. ; Yao, J.J. ; DeNatale, J.F. ; Hong, J.H.

Author_Institution

Rockwell Inst. Sci. Center, Thousand Oaks, CA, USA

Volume

1

fYear

1999

fDate

1999

Firstpage

257

Abstract

We report the successful integration of MEMS microrelays with PHEMT MMIC in a single monolithic structure. The process we describe here allows us to build MEMS microrelays along GaAs PHEMT devices without any sacrifice in performance or yield to either device. The test structure used the switches to activate one of two X-band LNAs. The switches have an insertion loss of less than 0.3 dB up to 50 GHz while the LNAs have a gain of 20 dB and 1.1 dB NF at 9 GHz

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; field effect MMIC; gallium arsenide; micromachining; micromechanical devices; microwave switches; 0.3 dB; 1.1 dB; 20 dB; 50 GHz; 9 GHz; GaAs; GaAs PHEMT MMICs; X-band LNAs; high performance MEMS microrelays; insertion loss; single monolithic structure; Gain; Gallium arsenide; Insertion loss; MMICs; Micromechanical devices; Microrelays; Noise measurement; PHEMTs; Switches; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Optoelectronics Conference, 1999. SBMO/IEEE MTT-S, APS and LEOS - IMOC '99. International

Conference_Location

Rio de Janeiro

Print_ISBN

0-7803-5807-4

Type

conf

DOI

10.1109/IMOC.1999.867103

Filename

867103