Design and producibility optimization of single-bias d.c. coupled 10 Gbit/s MMIC transimpedance amplifiers using a GaAs enhancement/depletion PHEMT technology

Author

Corso, V. ; Bastida, E.M. ; Patiri, V. ; Finardi, C.A.

Author_Institution

CPqD Res. & Dev. Center, Sao Paulo, Brazil

Volume

1

fYear

1999

fDate

1999

Firstpage

261

Abstract

The design, fully market driven, is described of a d.c. coupled monolithic amplifier for 10 Gbit/s optical communications with 8.7 GHz operational bandwidth, 58 dBΩ transimpedance gain and equivalent input noise current density lower than 6 pA/√Hz. The paper also discusses some important design issues on cost and producibility optimization of the circuit, which makes use of an original mixed inductive and capacitive peaking technique and of an advanced 0.2 μm gate length enhancement-depletion GaAs HEMT technology

Keywords

DC amplifiers; HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; circuit optimisation; field effect MMIC; gallium arsenide; integrated circuit design; optical receivers; preamplifiers; wideband amplifiers; 0.2 micron; 10 Gbit/s; 8.7 GHz; DC coupled monolithic amplifier; GaAs; GaAs enhancement/depletion PHEMT technology; Gbit/s optical communications; MMIC transimpedance amplifiers; mixed inductive/capacitive peaking technique; producibility optimization; pseudomorphic HEMT technology; single-bias amplifier; Bandwidth; Coupling circuits; Design optimization; Low-noise amplifiers; Operational amplifiers; Optical amplifiers; Optical coupling; Optical design; Optical fiber communication; Semiconductor optical amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Optoelectronics Conference, 1999. SBMO/IEEE MTT-S, APS and LEOS - IMOC '99. International

Conference_Location

Rio de Janeiro

Print_ISBN

0-7803-5807-4

Type

conf

DOI

10.1109/IMOC.1999.867104

Filename

867104