Monolithic transistors SPST switch for L band

Author

Torres, Jorge Alves ; Freire, J Costa

Author_Institution

Inst. Superior de Engenharia de Lisboa, Portugal

Volume

1

fYear

1999

fDate

1999

Firstpage

275

Abstract

A comparison of SPST (single pole single throw) Switch topologies is presented. A 3 MESFET´s monolithic GaAs switch was designed, for 2 GHz operation, fabricated and tested in 3 different bias conditions. It is shown that a floating configuration presents on-state lower insertion losses (~1.7 dB). However, the off-state isolation has the same order of magnitude in all three bias conditions (typically 50 dB). Finally, several resonant topologies were studied and a new topology is proposed to increase the off-state isolation without degrading the on-state insertion losses. The advantages and drawbacks of resonant topologies over non-resonant configurations are also discussed taking into account technology constraints and operation frequency

Keywords

III-V semiconductors; MESFET integrated circuits; UHF integrated circuits; field effect MMIC; field effect transistor switches; gallium arsenide; losses; switching circuits; 1.7 dB; 2 GHz; GaAs; L-band switch; MESFET switch; SPST switch topologies; bias conditions; monolithic GaAs switch; monolithic SPST switch; nonresonant configurations; offstate isolation; onstate insertion losses; resonant topologies; single pole single throw switch; transistor switch; Degradation; Frequency; Gallium arsenide; Insertion loss; Isolation technology; MESFETs; Resonance; Switches; Testing; Topology;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Optoelectronics Conference, 1999. SBMO/IEEE MTT-S, APS and LEOS - IMOC '99. International

Conference_Location

Rio de Janeiro

Print_ISBN

0-7803-5807-4

Type

conf

DOI

10.1109/IMOC.1999.867108

Filename

867108