Title :
Monolithic transistors SPST switch for L band
Author :
Torres, Jorge Alves ; Freire, J Costa
Author_Institution :
Inst. Superior de Engenharia de Lisboa, Portugal
Abstract :
A comparison of SPST (single pole single throw) Switch topologies is presented. A 3 MESFET´s monolithic GaAs switch was designed, for 2 GHz operation, fabricated and tested in 3 different bias conditions. It is shown that a floating configuration presents on-state lower insertion losses (~1.7 dB). However, the off-state isolation has the same order of magnitude in all three bias conditions (typically 50 dB). Finally, several resonant topologies were studied and a new topology is proposed to increase the off-state isolation without degrading the on-state insertion losses. The advantages and drawbacks of resonant topologies over non-resonant configurations are also discussed taking into account technology constraints and operation frequency
Keywords :
III-V semiconductors; MESFET integrated circuits; UHF integrated circuits; field effect MMIC; field effect transistor switches; gallium arsenide; losses; switching circuits; 1.7 dB; 2 GHz; GaAs; L-band switch; MESFET switch; SPST switch topologies; bias conditions; monolithic GaAs switch; monolithic SPST switch; nonresonant configurations; offstate isolation; onstate insertion losses; resonant topologies; single pole single throw switch; transistor switch; Degradation; Frequency; Gallium arsenide; Insertion loss; Isolation technology; MESFETs; Resonance; Switches; Testing; Topology;
Conference_Titel :
Microwave and Optoelectronics Conference, 1999. SBMO/IEEE MTT-S, APS and LEOS - IMOC '99. International
Conference_Location :
Rio de Janeiro
Print_ISBN :
0-7803-5807-4
DOI :
10.1109/IMOC.1999.867108
