DocumentCode :
3559932
Title :
Ni–Cr-Based Thin-Film Cryoresistors
Author :
Satrapinski, Alexandre F. ; Savin, Alexander M. ; Novikov, Sergei ; Hahtela, Ossi M.
Author_Institution :
Centre for Metrol. & Accreditation, MIKES, Espoo
Volume :
58
Issue :
4
fYear :
2009
fDate :
4/1/2009 12:00:00 AM
Firstpage :
1206
Lastpage :
1210
Abstract :
Ni-Cr-based thin-film resistors have been fabricated and studied at temperatures of down to 50 mK. The resistivity of the films varied within (14-25)Omega*sq, depending on the additions of Cu, Al, Ge, and Mn. The minimum temperature coefficient (TC) at 4.2 K (TC = -50 middot 10 -6/K) is obtained for Ni75Cr20CU2.5AI2.5 (Evanohm alloy) doped with 2.5% Ge. At the 50-150 mK range, the TC of the alloy increases to -4.15 middot 10 -6/mK. The resistors demonstrate the Kondo minimum at 20-30 K. The power coefficient of the 560-kOmega sample, which was measured at 4.2 K, was found to be les -0.008 middot 10 -6/muW. Power dependence measurements at subkelvin temperatures showed an electron overheating at the power level of above 10 p W for a 500-k film resistor.
Keywords :
aluminium alloys; chromium alloys; copper alloys; cryogenic electronics; electric resistance measurement; germanium alloys; nickel alloys; temperature measurement; thin film resistors; Evanohm alloy; Ni70Cr20Cu2.5Al2.5; Power dependence measurements; electron overheating; minimum temperature coefficient; resistance 500 kohm; resistance 560 kohm; temperature 20 K to 30 K; temperature 4.2 K; temperature 50 mK to 150 mK; thin-film cryoresistors; Accurate measurements; cryoresistors; low temperature;
fLanguage :
English
Journal_Title :
Instrumentation and Measurement, IEEE Transactions on
Publisher :
ieee
Conference_Location :
12/16/2008 12:00:00 AM
ISSN :
0018-9456
Type :
jour
DOI :
10.1109/TIM.2008.2008579
Filename :
4717251
Link To Document :
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