DocumentCode :
3559966
Title :
Electrical Properties of 
Interfaces and GdGaO Dielectrics in GaAs-Based MOSFETs
Author :
Passlack, Matthias ; Droopad, Ravi ; Fejes, Peter ; Wang, Lingquan
Author_Institution :
Univ. of California, San Diego, CA
Volume :
30
Issue :
1
fYear :
2009
Firstpage :
2
Lastpage :
4
Abstract :
Electrical properties of Ga2O3/GaAs interfaces with GdGaO cap dielectrics used in recent enhancement-mode GaAs-based NMOSFETs which perform in line with theoretical model predictions are presented. Capacitors with GdGaO thickness ranging from 3.0 to 18 nm (0.9 les EOT les 3.9 nm) have been characterized by capacitance-voltage measurements. Midgap interface state density Dit, effective workfunction phim, fixed charge Qf, dielectric constant kappa, and low field leakage current density are 2 times1011 cm-2 middoteV-1, 4.93 eV, -8.9 times1011 cm-2, 19.5, and 10-9- 10-8 A/cm2, respectively. The presence of interfacial Gd was confirmed to dramatically degrade electrical interface properties. The data illuminate the intimate interplay between heterostructure and interface engineering to achieve optimum MOSFET operation.
Keywords :
III-V semiconductors; MOSFET; capacitors; current density; dielectric materials; electronic density of states; gallium arsenide; gallium compounds; interface states; leakage currents; permittivity; work function; Ga2O3-GaAs; GaAs; GaAs-based MOSFET; GdGaO; capacitance-voltage measurements; capacitors; dielectric constant; dielectrics; effective workfunction; electrical interface properties; electrical properties; fixed charge; low field leakage current density; midgap interface state density; $hbox{Ga}_{2}hbox{O}_{3}$; $hbox{Ga}_{2}hbox{O}_{3}$
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
Conference_Location :
12/16/2008 12:00:00 AM
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2008.2007579
Filename :
4717292
Link To Document :
