DocumentCode :
3559968
Title :
Low- 
TaN/HfLaO 
-MOSFETs Using Low-Temperature Formed Source–Drain Junctions
Author :
Lin, S.H. ; Liu, S.L. ; Yeh, F.S. ; Chin, Albert
Author_Institution :
Dept. of Electr. Eng., Nat. Tsing Hua Univ., Hsinchu
Volume :
30
Issue :
1
fYear :
2009
Firstpage :
75
Lastpage :
77
Abstract :
We report low-threshold-voltage (Vt) TaN/HfLaO n-MOSFETs using solid-phase-diffusion (SPD)-formed junctions at a low temperature of 650 degC. The gate-first and self-aligned TaN/HfLaO n-MOSFETs using Ni/Sb SPD-formed source-drain junctions showed a low Vt of 0.16 V and a peak electron mobility of 187 cm2/V middots at a small 1.3-nm equivalent oxide thickness.
Keywords :
MOSFET; diffusion; hafnium compounds; nanotechnology; tantalum compounds; TaN-HfLaO; low-threshold-voltage n-MOSFETs; peak electron mobility; size 1.3 nm; solid-phase-diffusion-formed junctions; source-drain junctions; temperature 650 degC; HfLaO; low $V_{t}$; low $V_{t}$
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
Conference_Location :
12/16/2008 12:00:00 AM
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2008.2009011
Filename :
4717294
Link To Document :
