• DocumentCode
    3559968
  • Title

    Low- V_{t} TaN/HfLaO n -MOSFETs Using Low-Temperature Formed Source–Drain Junctions

  • Author

    Lin, S.H. ; Liu, S.L. ; Yeh, F.S. ; Chin, Albert

  • Author_Institution
    Dept. of Electr. Eng., Nat. Tsing Hua Univ., Hsinchu
  • Volume
    30
  • Issue
    1
  • fYear
    2009
  • Firstpage
    75
  • Lastpage
    77
  • Abstract
    We report low-threshold-voltage (Vt) TaN/HfLaO n-MOSFETs using solid-phase-diffusion (SPD)-formed junctions at a low temperature of 650 degC. The gate-first and self-aligned TaN/HfLaO n-MOSFETs using Ni/Sb SPD-formed source-drain junctions showed a low Vt of 0.16 V and a peak electron mobility of 187 cm2/V middots at a small 1.3-nm equivalent oxide thickness.
  • Keywords
    MOSFET; diffusion; hafnium compounds; nanotechnology; tantalum compounds; TaN-HfLaO; low-threshold-voltage n-MOSFETs; peak electron mobility; size 1.3 nm; solid-phase-diffusion-formed junctions; source-drain junctions; temperature 650 degC; HfLaO; low $V_{t}$; low $V_{t}$; solid-phase diffusion (SPD);
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • Conference_Location
    12/16/2008 12:00:00 AM
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2008.2009011
  • Filename
    4717294
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3559968