Title :
A Low-Temperature Microwave Anneal Process for Boron-Doped Ultrathin Ge Epilayer on Si Substrate
Author :
Lee, Yao-Jen ; Hsueh, Fu-Kuo ; Huang, Shih-Chiang ; Kowalski, Jeff M. ; Kowalski, Jeff E. ; Cheng, Alex T Y ; Koo, Ann ; Luo, Guang-Li ; Wu, Ching-Yi
Author_Institution :
Nat. Nano Device Labs., Hsinchu
Abstract :
High source/drain concentration level, ultrashallow junction, and high-mobility channel are important for the requirements of nanoscale transistors. Microwave processing of semiconductors could offer distinct advantages over conventional RTP systems in some applications, and the anneal temperature is within the range of 300degC-500degC. By using a low-temperature microwave anneal, the sheet resistance and boron diffusion in the Si/Ge/Si substrate could be reduced effectively, and the crystalline structure of Si/Ge/Si is not damaged according to the TEM image and the XRD signals.
Keywords :
MOSFET; X-ray diffraction; boron; diffusion; elemental semiconductors; germanium; rapid thermal annealing; semiconductor epitaxial layers; semiconductor junctions; silicon; transmission electron microscopy; CMOSFET; Ge:B; Si-Ge-Si; TEM; XRD; crystalline structure; diffusion; high source-drain concentration level; high-mobility channel; low-temperature microwave anneal process; microwave processing; nanoscale transistors; rapid thermal annealing; sheet resistance; temperature 300 C to 500 C; ultrashallow junction; ultrathin epilayer; Ge; low-temperature anneal; microwave anneal; rapid thermal anneal (RTA);
Journal_Title :
Electron Device Letters, IEEE
Conference_Location :
12/16/2008 12:00:00 AM
DOI :
10.1109/LED.2008.2009474
