DocumentCode
3560000
Title
Magnetization Processes in Ultrathin Co Film Grown on Stepped Si(111) Substrate
Author
Stupakiewicz, Andrzej ; Fleurence, A. ; Maziewski, A. ; Maroutian, T. ; Gogol, P. ; Bartenlian, B. ; M?©gy, R. ; Beauvillain, P.
Author_Institution
Lab. of Magn., Univ. of Bialystok, Bialystok
Volume
44
Issue
11
fYear
2008
Firstpage
2887
Lastpage
2890
Abstract
The aim of the paper is to study the magnetization processes and magnetic domain structure in epitaxial ultrathin Co films grown on stepped Si(111) substrates. The surfaces after Cu and Au/Cu coverage were investigated using in situ STM technique. The thickness driven evolution of hysteresis loops corresponds to spin-reorientation transition above 7 monolayers (ML) Co thickness. The in-plane magnetic anisotropy symmetry was deduced from magneto-optical (MOKE) hysteresis loops. The experimental data are discussed taking into account contributions of both perpendicular and in-plane uniaxial step-induced anisotropy. The preference of domain wall propagation for 3 and 5 ML Co thicknesses could be explained by the step-induced in-plane magnetic anisotropy determined from in-plane MOKE measurement.
Keywords
buffer layers; cobalt; copper; gold; magnetic anisotropy; magnetic domains; magnetic epitaxial layers; magnetic hysteresis; magneto-optical effects; monolayers; scanning tunnelling microscopy; silicon; Au-Co-Au-Cu-Si; MOKE measurement; STM; Si; buffer layers; domain wall propagation; epitaxial ultrathin cobalt film; in-plane magnetic anisotropy symmetry; magnetic domain structure; magnetization process; magneto-optical hysteresis loops; monolayers; spin-reorientation transition; stepped Si(111) substrate; Cobalt; magnetic anisotropy; magnetic domains; magnetization reversal;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/TMAG.2008.2001519
Filename
4717332
Link To Document