DocumentCode
356001
Title
Statistical design of the four-MOSFET structure
Author
Tarim, Tuna B. ; Kuntman, H. Hakan ; Ismail, Mohammed
Author_Institution
Analog VLSI Lab., Ohio State Univ., Columbus, OH, USA
Volume
1
fYear
1999
fDate
1999
Firstpage
22
Abstract
The statistical design of the four-MOSFET structure is presented in this paper. The quantitative measure of the effect of mismatch between the four transistors on nonlinearity and offset current is provided through contours. Optimization of transistor W and L values are demonstrated. The four-MOSFET structure was fabricated through the MOSIS 2 μm process using MOS transistor Level-3 model parameters. The experimental results are included in the paper
Keywords
CMOS analogue integrated circuits; VLSI; circuit CAD; circuit optimisation; integrated circuit design; integrated circuit modelling; statistical analysis; 2 micron; CMOS analogue VLSI; Level-3 model parameters; MOSIS; contours; four-MOSFET structure; nonlinearity; offset current; statistical design; transistor value optimization; Circuits; Current measurement; Design engineering; Linearity; Low voltage; MOSFETs; Resistors; Semiconductor device modeling; Transconductors; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 1999. 42nd Midwest Symposium on
Conference_Location
Las Cruces, NM
Print_ISBN
0-7803-5491-5
Type
conf
DOI
10.1109/MWSCAS.1999.867199
Filename
867199
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