• DocumentCode
    3560019
  • Title

    Dependence of Ordering Kinetics of FePt Thin Films on Different Substrates

  • Author

    Zha, C.L. ; He, S.H. ; Ma, B. ; Zhang, Z.Z. ; Gan, F.X. ; Jin, Q.Y.

  • Author_Institution
    Dept. of Opt. Sci. & Eng., Fudan Univ., Shanghai
  • Volume
    44
  • Issue
    11
  • fYear
    2008
  • Firstpage
    3539
  • Lastpage
    3542
  • Abstract
    FePt thin films are deposited on SrTiO3, MgO, and a 2 nm-FeOx, underlayer on an Si substrate at room temperature and then annealed at elevated temperatures. Studies of the L10 ordering process in each case show that the ordering temperature for the FePt film on the nonepitaxial Si/FeOx, substrate is ~150degC lower than the epitaxial FePt films deposited on MgO and SrTiO3 substrates. We argue that internal stresses arising from lattice defects and a recrystallizing process as well as thermal strain from differences in thermal expansion between substrate and film are responsible for the differences in ordering kinetics from the A1 to L10 phase of FePt on the various substrates.
  • Keywords
    annealing; crystal defects; crystal orientation; epitaxial growth; iron alloys; magnesium compounds; recrystallisation; silicon; strontium compounds; thermal expansion; thin films; FeO; FePt; L10 ordering process; MgO; Si; SrTiO3; annealing; deposition; lattice defects; ordering kinetics; ordering temperature; recrystallization; silicon substrate; substrates effect; thermal expansion; thermal strain; thin films; Epitaxial growth; FePt; nonepitaxial growth; ordering kinetics;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/TMAG.2008.2001609
  • Filename
    4717351