• DocumentCode
    3560213
  • Title

    Voltage Dependence of Spin Transfer Torque In Magnetic Tunnel Junctions

  • Author

    Chshiev, M. ; Theodonis, I. ; Kalitsov, A. ; Kioussis, N. ; Butler, W.H.

  • Author_Institution
    Center for Mater. for Inf. Technol., Univ. of Alabama, Tuscaloosa, AL
  • Volume
    44
  • Issue
    11
  • fYear
    2008
  • Firstpage
    2543
  • Lastpage
    2546
  • Abstract
    Theoretical investigations of spin transfer torque in magnetic tunnel junctions using the tight-binding model in the framework of nonequilibrium Green functions formalism are presented. We show that the behavior of the spin transfer torque as a function of applied voltage can vary over a wide range depending on the band parameters of the ferromagnetic electrodes and the insulator that comprise the magnetic tunnel junction. The behavior of both the parallel and perpendicular components of the spin torque is addressed. This behavior is explained in terms of the spin and charge current dependence and on the interplay between evanescent states in the insulator and the Fermi surfaces of ferromagnetic electrodes comprising the junction. The origin of the perpendicular (field-like) component of spin transfer torque at zero bias, i.e., exchange coupling through the barrier between ferromagnetic electrodes is discussed.
  • Keywords
    Fermi surface; Green´s function methods; ferromagnetism; magnetic tunnelling; spin dynamics; tight-binding calculations; Fermi surfaces; charge current; ferromagnetic electrodes; magnetic tunnel junctions; nonequilibrium Green functions formalism; spin transfer torque; tight-binding model; voltage dependence; Exchange coupling; magnetic tunnel junctions; quantum transport; spin transfer; spin-dependent tunneling;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/TMAG.2008.2002605
  • Filename
    4717562