DocumentCode
3560213
Title
Voltage Dependence of Spin Transfer Torque In Magnetic Tunnel Junctions
Author
Chshiev, M. ; Theodonis, I. ; Kalitsov, A. ; Kioussis, N. ; Butler, W.H.
Author_Institution
Center for Mater. for Inf. Technol., Univ. of Alabama, Tuscaloosa, AL
Volume
44
Issue
11
fYear
2008
Firstpage
2543
Lastpage
2546
Abstract
Theoretical investigations of spin transfer torque in magnetic tunnel junctions using the tight-binding model in the framework of nonequilibrium Green functions formalism are presented. We show that the behavior of the spin transfer torque as a function of applied voltage can vary over a wide range depending on the band parameters of the ferromagnetic electrodes and the insulator that comprise the magnetic tunnel junction. The behavior of both the parallel and perpendicular components of the spin torque is addressed. This behavior is explained in terms of the spin and charge current dependence and on the interplay between evanescent states in the insulator and the Fermi surfaces of ferromagnetic electrodes comprising the junction. The origin of the perpendicular (field-like) component of spin transfer torque at zero bias, i.e., exchange coupling through the barrier between ferromagnetic electrodes is discussed.
Keywords
Fermi surface; Green´s function methods; ferromagnetism; magnetic tunnelling; spin dynamics; tight-binding calculations; Fermi surfaces; charge current; ferromagnetic electrodes; magnetic tunnel junctions; nonequilibrium Green functions formalism; spin transfer torque; tight-binding model; voltage dependence; Exchange coupling; magnetic tunnel junctions; quantum transport; spin transfer; spin-dependent tunneling;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/TMAG.2008.2002605
Filename
4717562
Link To Document