DocumentCode :
3560231
Title :
The Effects of Cotunneling and Spin Flip on the Spin Polarized Transport in a Ferromagnetic Single Electron Transistor
Author :
Ma, Minjie J. ; Jalil, Mansoor Bin Adul ; Tan, Seng Ghee
Author_Institution :
Electron. & Comput. Eng. Dept., Nat. Univ. of Singapore, Singapore
Volume :
44
Issue :
11
fYear :
2008
Firstpage :
2658
Lastpage :
2661
Abstract :
We present a theoretical study of spin polarized transport in a single-electron tunneling transistor with ferromagnetic source and drain electrodes. The sequential tunneling and cotunneling currents are analyzed as a function of the intrinsic spin polarization of the electrodes, and spin flip effects within the central island electrode, for the case of collinear magnetization configuration. It was found that an antiparallel alignment of the electrode magnetization leads to a suppression of both the sequential tunneling and cotunneling currents, with the degree of suppression being greater for the higher order cotunneling current. For the sequential case, the suppression can be reduced by introducing finite spin flip within the island, but this has virtually no effect on the cotunneling current.
Keywords :
electrodes; ferromagnetism; magnetic tunnelling; magnetisation; magnetoelectronics; single electron transistors; spin polarised transport; central island electrode; collinear magnetization configuration; cotunneling currents; drain electrodes; ferromagnetic single electron transistor; ferromagnetic source; intrinsic spin polarization; single-electron tunneling transistor; spin flip effects; spin polarized transport; Cotunneling; ferromagnetic; sequential tunneling; single electron transistor; spin flip; spin polarization;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.2008.2002404
Filename :
4717582
Link To Document :
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