Title :
Analog EEPROM in standard process AMS 0.8 μm CMOS
Author :
Abouchi, N. ; Gallorini, R. ; Vinard, C. ; Grisel, Richard
Author_Institution :
LISA, CNRS, Villeurbanne, France
Abstract :
The design of a non-volatile analog memory is presented. The specificity of this memory lies in the fact that it is realized in standard AMS 0.8 μm CMOS technology. The concept is based on the model of the floating gate transistor which sees its threshold voltage modified following the amount of carriers which are on its gate. The carrier injection physics rests on cold tunneling (Fowler-Nordheim effect)
Keywords :
CMOS analogue integrated circuits; CMOS memory circuits; EPROM; analogue storage; tunnelling; 0.8 micron; AMS CMOS technology; Fowler-Nordheim tunneling; analog EEPROM; carrier injection; floating gate transistor; nonvolatile memory; threshold voltage; Analog memory; Application specific integrated circuits; CMOS process; CMOS technology; EPROM; Nonvolatile memory; Physics; Semiconductor device modeling; Threshold voltage; Tunneling;
Conference_Titel :
Circuits and Systems, 1999. 42nd Midwest Symposium on
Conference_Location :
Las Cruces, NM
Print_ISBN :
0-7803-5491-5
DOI :
10.1109/MWSCAS.1999.867231
