Title :
Magnetoresistance Variation of Magnetic Tunnel Junctions with NiFeSiB/CoFeB Free Layers Depending on MgO Tunnel Barrier Thickness
Author :
Cho, Ji Ung ; Kim, Do Kyun ; Wang, Tian Xing ; Isogami, Shinji ; Tsunoda, Masakiyo ; Takahashi, Migaku ; Kim, Young Keun
Author_Institution :
Dept. of Mater. Sci. & Eng., Korea Univ., Seoul
Abstract :
We developed NiFeSiB/CoFeB hybrid free-layers for magnetic tunnel junctions (MTJs) with MgO tunnel barrier layers. These junctions show tunneling magnetoresistance (TMR) ratios and resistance-area (RA) values ranging from 118-209% and 36-2380 Omega mum2 , respectively, obtained at room temperature. Compared to the CoFeB single free-layer case, the NiFeSiB/CoFeB hybrid free-layer approach has the advantage of lowering saturation magnetization. The low magnetization material would be effective to decrease the switching current in spin transfer torque (STT) switching. The experimental results show that the RA value depends not only on the thickness of the MgO barrier but also on the structure of the free layer used. Tunable in the TMR ratio and RA value using the design of the hybrid free-layer, our hybrid free-layered MTJs demonstrate a desirable lower RA value but a similar TMR ratio in comparison to the CoFeB free-layered ones.
Keywords :
boron alloys; cobalt alloys; iron alloys; magnetisation; nickel alloys; silicon alloys; tunnelling magnetoresistance; MgO; NiFeSiB-CoFeB; hybrid free layers; magnetic tunnel junctions; magnetization material; magnetoresistance variation; saturation magnetization; spin transfer torque switching; temperature 293 K to 298 K; tunnel barrier thickness; tunneling magnetoresistance; Hybrid free layer; NiFeSiB; low saturation magnetization; magnetic tunnel junction;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.2008.2003244