Direct interferometric measurements of quantum-confined Stark effect in InAs/GaAs short period strained-layer superlattice MQWs

Author

Koehler, S.D. ; Garmire, E.M. ; Jupina, M.H. ; Hasenberg, T.C. ; Kost, A.R.

Author_Institution

Dept. of Electr. Eng., Electrophys., Univ. of Southern California, Los Angeles, CA, USA

Volume

27

Issue

25

fYear

1991

Firstpage

2303

Lastpage

2304

Abstract

The electrorefraction within and below the band edge of multiple (50) InAs/GaAs short period strained-layer superlattice quantum wells has been measured. An index change of 4*10^-3 was measured near the excitonic resonance with an applied electric field of 27 kV/cm, corresponding to a quadratic electro-optic coefficient of -3*10^-13 cm²/V². These results agree with predictions from the Kramers-Kronig relations based on measurements of electroabsorption.

Keywords

III-V semiconductors; Stark effect; electroabsorption; gallium arsenide; indium compounds; semiconductor quantum wells; semiconductor superlattices; InAs-GaAs; Kramers Kronig relations predictions; direct interferometric measurements; electric field; electrorefraction; excitonic resonance; index change; light interferometry; measurements of electroabsorption; quadratic electro-optic coefficient; quantum-confined Stark effect; semiconductors; short period strained-layer superlattice; strained-layer superlattice MQWs;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19911426

Filename

121327