Title :
Direct interferometric measurements of quantum-confined Stark effect in InAs/GaAs short period strained-layer superlattice MQWs
Author :
Koehler, S.D. ; Garmire, E.M. ; Jupina, M.H. ; Hasenberg, T.C. ; Kost, A.R.
Author_Institution :
Dept. of Electr. Eng., Electrophys., Univ. of Southern California, Los Angeles, CA, USA
Abstract :
The electrorefraction within and below the band edge of multiple (50) InAs/GaAs short period strained-layer superlattice quantum wells has been measured. An index change of 4*10-3 was measured near the excitonic resonance with an applied electric field of 27 kV/cm, corresponding to a quadratic electro-optic coefficient of -3*10-13 cm2/V2. These results agree with predictions from the Kramers-Kronig relations based on measurements of electroabsorption.
Keywords :
III-V semiconductors; Stark effect; electroabsorption; gallium arsenide; indium compounds; semiconductor quantum wells; semiconductor superlattices; InAs-GaAs; Kramers Kronig relations predictions; direct interferometric measurements; electric field; electrorefraction; excitonic resonance; index change; light interferometry; measurements of electroabsorption; quadratic electro-optic coefficient; quantum-confined Stark effect; semiconductors; short period strained-layer superlattice; strained-layer superlattice MQWs;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19911426
