• DocumentCode
    3560488
  • Title

    Rectifying effects on TiPtAu/p-InGaAsP contacts induced by plasma processes

  • Author

    Audino, R. ; Autore, G. ; Dovio, D. ; Piccirillo, A.

  • Author_Institution
    CSELT, Torino, Italy
  • Volume
    27
  • Issue
    25
  • fYear
    1991
  • Firstpage
    2359
  • Lastpage
    2360
  • Abstract
    TiPtAu/p-InGaAsP ohmic contacts for laser devices show nonohmic behaviour which is attributed to damage induced by plasma processes during fabrication. Surface recovering by chemical etching of the top few tenths of a nanometre enables ohmic contacts to be obtained. These results were confirmed using SPICE simulations.
  • Keywords
    III-V semiconductors; Schottky effect; etching; gallium arsenide; gallium compounds; gold alloys; indium compounds; ohmic contacts; plasma CVD coatings; platinum alloys; semiconductor-metal boundaries; titanium alloys; PECVD; RIE; SPICE simulations; TiPtAu-InGaAsP; chemical etching; fabrication damage; laser devices; nonohmic behaviour; ohmic contacts; plasma induced CVD; plasma processes; rectifying effects; semiconductor lasers; surface-recovering; unwanted Schottky barrier;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19911461
  • Filename
    121358
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3560488