Title :
Proton damage effects on p-channel CCDs
Author_Institution :
Sira Electro-Opt. Ltd., Chislehurst, UK
Abstract :
An experimental batch of p-buried channel CCDs has been fabricated and characterised for proton-induced radiation damage. Dark current effects were similar to conventional n-channel CCDs, but radiation-induced changes in charge transfer inefficiency were reduced by approximately a factor 3 for -30/spl deg/C operation and background signal /spl sim/2000 electrons/pixel; though this is a lower limit and further reduction may be possible in future CCD batches.
Keywords :
charge-coupled devices; proton effects; -30 C; charge transfer inefficiency; dark current; p-buried channel CCD; proton irradiation damage; CMOS image sensors; Charge coupled devices; Charge transfer; Charge-coupled image sensors; Cooling; Dark current; Dielectric substrates; Electrons; Fabrication; Protons;
Journal_Title :
Nuclear Science, IEEE Transactions on
