• DocumentCode
    3560496
  • Title

    Proton damage effects on p-channel CCDs

  • Author

    Hopkinson, G.R.

  • Author_Institution
    Sira Electro-Opt. Ltd., Chislehurst, UK
  • Volume
    46
  • Issue
    6
  • fYear
    1999
  • Firstpage
    1790
  • Lastpage
    1796
  • Abstract
    An experimental batch of p-buried channel CCDs has been fabricated and characterised for proton-induced radiation damage. Dark current effects were similar to conventional n-channel CCDs, but radiation-induced changes in charge transfer inefficiency were reduced by approximately a factor 3 for -30/spl deg/C operation and background signal /spl sim/2000 electrons/pixel; though this is a lower limit and further reduction may be possible in future CCD batches.
  • Keywords
    charge-coupled devices; proton effects; -30 C; charge transfer inefficiency; dark current; p-buried channel CCD; proton irradiation damage; CMOS image sensors; Charge coupled devices; Charge transfer; Charge-coupled image sensors; Cooling; Dark current; Dielectric substrates; Electrons; Fabrication; Protons;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/23.819155
  • Filename
    819155
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3560496