DocumentCode :
3560501
Title :
Double heterojunction bipolar transistor in AlxGa1-xAs/GaAs1-ySby system
Author :
Ikossi-Anastasiou, K. ; Ezis, A. ; Evans, K.R. ; Stutz, C.E.
Author_Institution :
Dept. of Electr. & Comput. Eng., Louisiana State Univ., Baton Rouge, LA, USA
Volume :
27
Issue :
2
fYear :
1991
Firstpage :
142
Lastpage :
144
Abstract :
Double heterojunction bipolar transistors based on the AlxGa1-xAs/GaAs1-ySby system are examined. The base layer consists of narrow band gap GaAs1-ySby and the emitter and collector consist of wider band gap AlxGa1-xAs. Preliminary experimental results show that AlGaAs/GaAsSb/GaAs DHBTs exhibit a current gain of five and a maximum collector current density of 5*104 A/cm2.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; heterojunction bipolar transistors; AlGaAs-GaAsSb-GaAs; base layer; collector current density; current gain; double HBT; heterojunction bipolar transistor; narrow band gap GaAs 1-ySb y; wider band gap Al xGa 1-xAs;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19910093
Filename :
83169
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3560501
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