DocumentCode
3560575
Title
Extraction of Separated Source and Drain Resistances in Amorphous Indium–Gallium–Zinc Oxide TFTs Through
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https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3560575
 thin-film transistors (TFTs). Due to the insulated gate structure, however, separate extraction is difficult through direct-current <i>I</i>-<i>V</i> characterization. In this letter, we propose a simple and useful technique for separate extraction of <i>RS</i> from <i>RD</i> in a-IGZO TFTs through a two-terminal parallel-mode <i>C</i> -<i>V</i> technique. We experimentally verified the validity of the proposed technique by comparing the result with the source-to-drain resistance from the <i>I</i>-<i>V</i> characteristics.</div></div>
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<div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Keywords</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>amorphous semiconductors; gallium compounds; indium compounds; insulated gate field effect transistors; semiconductor device models; thin film transistors; zinc compounds; C-V characterization; I-V characteristics; InGaZnO; RTOT; a-IGZO thin-film transistors; amorphous indium-gallium-zinc oxide TFT; device degradation; direct-current I-V characterization; insulated gate structure; layout degradation; process degradation; separate extraction; separated source and drain resistances; source-to-drain resistance; total resistance; two-terminal parallel-mode C-V technique; Capacitance; Electrical resistance measurement; Logic gates; Resistance; Thin film transistors; Amorphous; drain resistance; nonlinear model; parameter extraction; parasitic resistance; source resistance; thin–film transistors (TFTs);</div></div>
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<div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>fLanguage</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>English</div></div>
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<div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Journal_Title</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>Electron Device Letters, IEEE</div></div>
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<div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Publisher</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>ieee</div></div>
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<div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Conference_Location</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>4/21/2011 12:00:00 AM</div></div>
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<div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>ISSN</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>0741-3106</div></div>
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<div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Type</span></div><div class='col-12 col-md-9 leftDirection leftAlign'><h2 class='mb-0 fw-semibold'>jour</h2></div></div>
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<div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>DOI</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>10.1109/LED.2011.2127438</div></div>
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<div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Filename</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>5753915</div></div>
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<div class='row g-0 align-items-center'><div class='col-12 col-md-3 fw-bold mb-2 mb-md-0'><span class='text-muted small'>Link To Document</span></div><div class='col-12 col-md-9 leftDirection leftAlign'><a class='text-break' href='https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3560575' target='_blank' rel=)
https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3560575