Title :
Geometrical Effects on Characteristic Temperature and Modal Gain of InAs/GaAs Quantum-Dot Lasers
Author :
Wang, Rui ; Yoon, Soon Fatt ; Zhao, Han Xue ; Ngo, Chun Yong
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
fDate :
7/1/2011 12:00:00 AM
Abstract :
The characteristic temperature (T0) and modal gain of 1.3-μm p-doped InAs/GaAs quantum-dot (QD) lasers with different ridge heights (h) have been investigated as a function of injection current under different operation temperatures ranging from 20°C to 120°C. The results show that the geometrical shape of the laser ridge has significant effect on the threshold current density, T0, and modal gain. The optimum ridge height in the QD laser should be controlled with etch depth where most of the doped layers above the active region are removed.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser beams; optical control; quantum dot lasers; InAs-GaAs; characteristic temperature; doped layers; etch depth; geometrical shape; injection current; laser ridge; modal gain; quantum-dot lasers; ridge heights; temperature 20 degC to 120 degC; threshold current density; wavelength 1.3 mum; Gallium arsenide; Measurement by laser beam; Quantum dot lasers; Temperature sensors; Waveguide lasers; Characteristic temperature ($T _{0}$); modal gain; p-doping; quantum dot (QD); ridge height;
Journal_Title :
Photonics Technology Letters, IEEE
Conference_Location :
4/21/2011 12:00:00 AM
DOI :
10.1109/LPT.2011.2141126
