DocumentCode :
3560596
Title :
Effects of Gd Doping and Oxygen Vacancies on the Properties of EuO Films Prepared via Pulsed Laser Deposition
Author :
Wang, Xianjie ; Liu, Pan ; Fox, Kyle A. ; Tang, Jinke ; Santana, Juan A Col?³n ; Belashchenko, Kirill ; Dowben, Peter A. ; Sui, Yu
Author_Institution :
Dept. of Phys. & Astron., Univ. of Wyoming, Laramie, WY, USA
Volume :
46
Issue :
6
fYear :
2010
fDate :
6/1/2010 12:00:00 AM
Firstpage :
1879
Lastpage :
1882
Abstract :
We have successfully prepared EuO films on Si(100) wafers via pulsed laser deposition (PLD). It is well recognized that EuO grows with texture growth along (100) but the addition of 4% Gd changes the lattice constant and the texture growth to (111) as well as having a profound influence on the magnetic properties. The differences in the effects between Gd doping and oxygen vacancies, both expected to be n-type (donor state) dopants in EuO, are discussed.
Keywords :
doping; impurity states; lattice constants; pulsed laser deposition; thin films; vacancies (crystal); EuO:Gd; Si; Si(100) wafers; donor state; gadolinium doping; lattice constant; magnetic properties; oxygen vacancies; pulsed laser deposition; texture growth; thin films; Astronomy; Doping; Laser theory; Magnetic films; Magnetic properties; Optical materials; Optical pulses; Oxygen; Physics; Pulsed laser deposition; Doping; EuO; Gd; magnetic semiconductors; oxygen vacancies; pulsed laser deposition;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
Conference_Location :
6/1/2010 12:00:00 AM
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.2010.2046314
Filename :
5467710
Link To Document :
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