Effects of Gd Doping and Oxygen Vacancies on the Properties of EuO Films Prepared via Pulsed Laser Deposition

Author

Wang, Xianjie ; Liu, Pan ; Fox, Kyle A. ; Tang, Jinke ; Santana, Juan A Col?³n ; Belashchenko, Kirill ; Dowben, Peter A. ; Sui, Yu

Author_Institution

Dept. of Phys. & Astron., Univ. of Wyoming, Laramie, WY, USA

Volume

46

Issue

6

fYear

2010

fDate

6/1/2010 12:00:00 AM

Firstpage

1879

Lastpage

1882

Abstract

We have successfully prepared EuO films on Si(100) wafers via pulsed laser deposition (PLD). It is well recognized that EuO grows with texture growth along (100) but the addition of 4% Gd changes the lattice constant and the texture growth to (111) as well as having a profound influence on the magnetic properties. The differences in the effects between Gd doping and oxygen vacancies, both expected to be n-type (donor state) dopants in EuO, are discussed.

Keywords

doping; impurity states; lattice constants; pulsed laser deposition; thin films; vacancies (crystal); EuO:Gd; Si; Si(100) wafers; donor state; gadolinium doping; lattice constant; magnetic properties; oxygen vacancies; pulsed laser deposition; texture growth; thin films; Astronomy; Doping; Laser theory; Magnetic films; Magnetic properties; Optical materials; Optical pulses; Oxygen; Physics; Pulsed laser deposition; Doping; EuO; Gd; magnetic semiconductors; oxygen vacancies; pulsed laser deposition;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

Conference_Location

6/1/2010 12:00:00 AM

ISSN

0018-9464

Type

jour

DOI

10.1109/TMAG.2010.2046314

Filename

5467710