Title :
Spin Transfer on Low Resistance-Area MgO-Based Magnetic Tunnel Junctions Prepared by Ion Beam Deposition
Author :
Yang, Jie ; Macedo, Rita J. ; Debs, Mariam G. ; Ferreira, Ricardo ; Cardoso, Susana ; Freitas, Paulo J P ; Teixeira, Jos?© M. ; Ventura, Jo?£o O.
Author_Institution :
Inst. for Nanosci. & Nanotechnol., INESC-Microsistemas e Nanotecnologias (INESC-MN), Lisbon, Portugal
fDate :
6/1/2010 12:00:00 AM
Abstract :
This work reports spin transfer switching results on nano-sized MgO-based magnetic tunnel junctions (MTJs) prepared by Ion Beam deposition (IBD). Nano-devices with areas down to 60 nm × 180 nm have been successfully nanofabricated. The MgO deposition conditions were optimized aiming at reducing the resistance-area (RA) product, and RA value as low as 0.8 ¿ ¿m2 could be successfully obtained for 0.75 nm thick MgO barriers. The average switching current density of 5.45 × 106 A/cm2 can be obtained for a MTJ nanopillar with the dimension of 225 nm × 730.3 nm with low RA of 1.47 ¿ ¿m2.
Keywords :
current density; ion beam assisted deposition; magnesium compounds; magnetic multilayers; magnetic switching; magnetic thin film devices; magnetic tunnelling; nanofabrication; nanomagnetics; nanostructured materials; MTJ nanopillar; MgO; ion beam deposition; nano-sized magnetic tunnel junctions; resistance-area product; spin transfer switching; switching current density; Current density; Ion beams; Magnetic switching; Magnetic tunneling; Magnetization; Physics; Switches; Tunneling magnetoresistance; US Department of Transportation; Writing; Ion beam deposition; MgO barrier; magnetic tunnel junction; spin transfer switching;
Journal_Title :
Magnetics, IEEE Transactions on
Conference_Location :
6/1/2010 12:00:00 AM
DOI :
10.1109/TMAG.2010.2041753
