Title :
Dynamic Analysis of Cascaded Laser Power Converters for Simultaneous High-Speed Data Detection and Optical-to-Electrical DC Power Generation
Author :
Shi, Jin-Wei ; Kuo, F.-M. ; Yang, Chan-Shan ; Lo, S.-S. ; Pan, Ci-Ling
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Taoyuan, Taiwan
fDate :
7/1/2011 12:00:00 AM
Abstract :
We analyze the dynamic behaviors of a novel device, i.e., cascaded high-speed laser power converters (LPCs), which can detect the direct-current (dc) component of an incoming high-speed optical data stream and efficiently convert its dc component to dc electrical power. By utilizing a p-type photoabsorption layer in our LPC, the problem of slow-motion holes can be eliminated, and only the electrons act as the active carriers. We can thus achieve high-speed performance with the LPC under forward-bias operation with a small electric field inside. Furthermore, according to our modeling and measurement results, there are a significant alternating-current capacitance reduction and an electron-trapping effect at the interface between the absorption and collector layers with a significant degradation in the carrier drift velocity. These become more serious with the increase in optical pumping power and forward-bias voltage and truly limit the net optical-to-electrical (O-E) bandwidth of the device. In order to overcome such a transient-time-limited bandwidth and further increase the maximum dc output voltage of the LPC, we connect two single LPCs in series (cascade). Error-free data detection of 10-Gb/s and an O-E dc power-generation efficiency of 21.1% can be achieved simultaneously at a wavelength of 850 nm by the use of such two cascaded LPCs.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; lasers; optical pumping; optoelectronic devices; photodiodes; power convertors; GaAs-AlGaAs; absorption layer; alternating-current capacitance reduction; bit rate 10 Gbit/s; carrier drift velocity; cascaded laser power converter; collector layer; direct-current component; dynamic analysis; efficiency 21.1 percent; electron-trapping effect; error-free data detection; forward-bias voltage; high-speed data detection; high-speed optical data stream; net optical-to-electrical bandwidth; optical pumping power; optical-to-electrical DC power generation; p-type photoabsorption layer; photodiode; photovoltaic; slow-motion hole; transient-time-limited bandwidth; wavelength 850 nm; Bandwidth; Current measurement; High speed optical techniques; Optical devices; Optical pumping; Photoconductivity; Voltage measurement; Photodiodes (PDs); photovoltaic;
Journal_Title :
Electron Devices, IEEE Transactions on
Conference_Location :
4/21/2011 12:00:00 AM
DOI :
10.1109/TED.2011.2136379