• DocumentCode
    3560636
  • Title

    Single Die Multiple 600 V Power Diodes With Deep Trench Terminations and Isolation

  • Author

    Vladimirova, Kremena ; Crebier, Jean-Christophe ; Avenas, Yvan ; Schaeffer, Christian

  • Author_Institution
    Grenoble Electr. Eng. Lab. (G2Elab), Grenoble-INP, St. Martin d´´Hères, France
  • Volume
    26
  • Issue
    11
  • fYear
    2011
  • Firstpage
    3423
  • Lastpage
    3429
  • Abstract
    This paper presents a new concept for low cost and high reliability monolithic integration of vertical power devices. The concept relies on the creation of deep trench terminations on the edge of the device, thus allowing to avoid 3 D peak surface electric field levels whereas complete insulation of the integrated power devices sharing the same backside contact electrode is guaranteed. Simulation results show that the stress of the electric field can be further reduced by introducing an angle on the trench termination walls. Power diodes in the range of 600 V with 87° wall angles of the 100-μm deep trench terminations are fabricated to demonstrate the feasibility and the effectiveness of the concept. The multidiode devices were experimentally tested under static and dynamic practical conditions. The fabricated prototypes fulfilled the initial design electrical specifications considering the breakdown voltage rating and demonstrated an excellent functional behavior. The implementation of the multidiode device into an interleaved converter is presented in this paper.
  • Keywords
    isolation technology; power convertors; power semiconductor devices; semiconductor diodes; backside contact electrode; deep trench termination; high reliability monolithic integration; integrated power device; interleaved converter; single die multiple power diode; size 100 mum; surface electric field; trench isolation; voltage 600 V; Dielectric materials; Electric fields; Junctions; Metals; Semiconductor diodes; Silicon; Substrates; Monolithic integrated circuits; power semiconductor diodes; switching converters; wafer scale integration;
  • fLanguage
    English
  • Journal_Title
    Power Electronics, IEEE Transactions on
  • Publisher
    ieee
  • Conference_Location
    4/21/2011 12:00:00 AM
  • ISSN
    0885-8993
  • Type

    jour

  • DOI
    10.1109/TPEL.2011.2145390
  • Filename
    5753945