• DocumentCode
    3560697
  • Title

    Impact of Body Doping and Thickness on the Performance of Germanium-Source TFETs

  • Author

    Kim, Sung Hwan ; Jacobson, Zachery A. ; Liu, Tsu-Jae King

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, CA, USA
  • Volume
    57
  • Issue
    7
  • fYear
    2010
  • fDate
    7/1/2010 12:00:00 AM
  • Firstpage
    1710
  • Lastpage
    1713
  • Abstract
    The impact of body doping and thickness on the performance of a germanium-source tunnel field-effect transistor in which band-to-band tunneling occurs entirely within the source region is investigated via 2-D device simulations calibrated to experimental data. It is found that the dominant leakage mechanism varies depending on the body design parameter values. A moderately doped (1018 cm-3) body that is not fully depleted provides for the best transistor performance.
  • Keywords
    field effect transistors; germanium; semiconductor doping; tunnelling; 2D device simulation; band-to-band tunneling; body doping; body thickness; germanium-source TFET; leakage mechanism; tunnel field-effect transistor; Body regions; Design optimization; Doping; Electrons; FETs; Germanium; Jacobian matrices; Temperature; Threshold voltage; Tunneling; Band-to-band tunneling (BTBT); germanium; tunnel field-effect transistor (TFET);
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • Conference_Location
    6/1/2010 12:00:00 AM
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2010.2049215
  • Filename
    5475280
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3560697