DocumentCode :
3560697
Title :
Impact of Body Doping and Thickness on the Performance of Germanium-Source TFETs
Author :
Kim, Sung Hwan ; Jacobson, Zachery A. ; Liu, Tsu-Jae King
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, CA, USA
Volume :
57
Issue :
7
fYear :
2010
fDate :
7/1/2010 12:00:00 AM
Firstpage :
1710
Lastpage :
1713
Abstract :
The impact of body doping and thickness on the performance of a germanium-source tunnel field-effect transistor in which band-to-band tunneling occurs entirely within the source region is investigated via 2-D device simulations calibrated to experimental data. It is found that the dominant leakage mechanism varies depending on the body design parameter values. A moderately doped (1018 cm-3) body that is not fully depleted provides for the best transistor performance.
Keywords :
field effect transistors; germanium; semiconductor doping; tunnelling; 2D device simulation; band-to-band tunneling; body doping; body thickness; germanium-source TFET; leakage mechanism; tunnel field-effect transistor; Body regions; Design optimization; Doping; Electrons; FETs; Germanium; Jacobian matrices; Temperature; Threshold voltage; Tunneling; Band-to-band tunneling (BTBT); germanium; tunnel field-effect transistor (TFET);
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
Conference_Location :
6/1/2010 12:00:00 AM
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2010.2049215
Filename :
5475280
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3560697
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