Comparison of Methods to Bias Fully Depleted SOI-Based MOSFET Nanoribbon pH Sensors

Author

Chapman, Richard A. ; Fernandes, Poornika G. ; Seitz, Oliver ; Stiegler, Harvey J. ; Wen, Huang-Chun ; Chabal, Yves J. ; Vogel, Eric M.

Author_Institution

Univ. of Texas at Dallas, Richardson, TX, USA

Volume

58

Issue

6

fYear

2011

fDate

6/1/2011 12:00:00 AM

Firstpage

1752

Lastpage

1760

Abstract

The potential and electric field boundary conditions for the Gouy-Chapman model of the electrolyte diffuse layer are used to properly couple the potentials in the silicon-on-insulator-based metal-oxide-semiconductor field-effect transistor to the electrolyte. This analysis is possible because the active silicon channel is fully depleted. Both the subthreshold and linear regimes are simulated. An operation with electrolyte floating and bias applied to the substrate is compared with the other methods of biasing the sensor.

Keywords

MOSFET; chemical sensors; electrolytes; nanostructured materials; pH measurement; silicon-on-insulator; Gouy-Chapman model; bias fully depleted SOI-based MOSFET nanoribbon pH sensors; electric field boundary condition; electrolyte diffuse layer; electrolyte floating; silicon channel; silicon-on-insulator-based metal-oxide-semiconductor field-effect transistor; Electric potential; Insulators; Logic gates; MOSFET circuits; Sensors; Silicon; Substrates; Capacitive coupling; floating gate; fully depleted silicon-on-insulator (SOI); ion-sensitive field-effect transistor (ISFET); pH sensor;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

Conference_Location

4/29/2011 12:00:00 AM

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2011.2132134

Filename

5759075