• DocumentCode
    3560733
  • Title

    Low-Cycle to Ultrahigh-Cycle Fatigue Lifetime Measurement of Single-Crystal-Silicon Specimens Using a Microresonator Test Device

  • Author

    Ikehara, Tsuyoshi ; Tsuchiya, Toshiyuki

  • Author_Institution
    Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan
  • Volume
    21
  • Issue
    4
  • fYear
    2012
  • Firstpage
    830
  • Lastpage
    839
  • Abstract
    The authors used a ramping-amplitude fatigue-test method to perform low-cycle fatigue tests in micrometer-sized single-crystal-silicon specimens using a resonant-type fatigue-test device. Very short delayed fractures from 4 ms to 29 s were observed by controlling the amplitude ramping rates with two self-oscillation electric circuits and different parameters. These lifetimes were converted to corresponding constant-amplitude lifetimes from 101 to 105 cycles using the relationship derived from a crack-growth analysis. S-N plots of measured lifetimes exhibited the transition of fatigue lives at the high-cycle region with a crack-growth exponent of 18.0, to the static fracture strength of 6.50 GPa at the low-cycle region corresponding to the original crack length of 7.9 nm. The existence of a very rapid fatigue fracture within 1 s was confirmed. From the obtained crack-growth parameters, the evolution of crack length and the effects of humidity were discussed.
  • Keywords
    circuit oscillations; elemental semiconductors; fatigue cracks; fatigue testing; fracture toughness; humidity; micromechanical resonators; micrometry; silicon; S-N plot; Si; amplitude ramping rate; constant-amplitude lifetime; crack-growth analysis; crack-growth parameter; fatigue fracture; high-cycle region; humidity; low-cycle fatigue lifetime measurement; low-cycle fatigue test; low-cycle region; micrometer-sized single-crystal-silicon specimen; microresonator test device; pressure 6.50 GPa; ramping-amplitude fatigue-test method; resonant-type fatigue-test device; self-oscillation electric circuit; size 7.9 nm; static fracture strength; time 1 s; time 4 ms to 29 s; ultrahigh-cycle fatigue lifetime measurement; Fatigue; Lifetime estimation; Loading; Oscillators; Silicon; Stress; Testing; Fatigue; lifetime; microelectromechanical systems (MEMS); oscillation; resonator; single crystal silicon (SCS);
  • fLanguage
    English
  • Journal_Title
    Microelectromechanical Systems, Journal of
  • Publisher
    ieee
  • Conference_Location
    5/2/2012 12:00:00 AM
  • ISSN
    1057-7157
  • Type

    jour

  • DOI
    10.1109/JMEMS.2012.2194771
  • Filename
    6193401