DocumentCode :
3560733
Title :
Low-Cycle to Ultrahigh-Cycle Fatigue Lifetime Measurement of Single-Crystal-Silicon Specimens Using a Microresonator Test Device
Author :
Ikehara, Tsuyoshi ; Tsuchiya, Toshiyuki
Author_Institution :
Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan
Volume :
21
Issue :
4
fYear :
2012
Firstpage :
830
Lastpage :
839
Abstract :
The authors used a ramping-amplitude fatigue-test method to perform low-cycle fatigue tests in micrometer-sized single-crystal-silicon specimens using a resonant-type fatigue-test device. Very short delayed fractures from 4 ms to 29 s were observed by controlling the amplitude ramping rates with two self-oscillation electric circuits and different parameters. These lifetimes were converted to corresponding constant-amplitude lifetimes from 101 to 105 cycles using the relationship derived from a crack-growth analysis. S-N plots of measured lifetimes exhibited the transition of fatigue lives at the high-cycle region with a crack-growth exponent of 18.0, to the static fracture strength of 6.50 GPa at the low-cycle region corresponding to the original crack length of 7.9 nm. The existence of a very rapid fatigue fracture within 1 s was confirmed. From the obtained crack-growth parameters, the evolution of crack length and the effects of humidity were discussed.
Keywords :
circuit oscillations; elemental semiconductors; fatigue cracks; fatigue testing; fracture toughness; humidity; micromechanical resonators; micrometry; silicon; S-N plot; Si; amplitude ramping rate; constant-amplitude lifetime; crack-growth analysis; crack-growth parameter; fatigue fracture; high-cycle region; humidity; low-cycle fatigue lifetime measurement; low-cycle fatigue test; low-cycle region; micrometer-sized single-crystal-silicon specimen; microresonator test device; pressure 6.50 GPa; ramping-amplitude fatigue-test method; resonant-type fatigue-test device; self-oscillation electric circuit; size 7.9 nm; static fracture strength; time 1 s; time 4 ms to 29 s; ultrahigh-cycle fatigue lifetime measurement; Fatigue; Lifetime estimation; Loading; Oscillators; Silicon; Stress; Testing; Fatigue; lifetime; microelectromechanical systems (MEMS); oscillation; resonator; single crystal silicon (SCS);
fLanguage :
English
Journal_Title :
Microelectromechanical Systems, Journal of
Publisher :
ieee
Conference_Location :
5/2/2012 12:00:00 AM
ISSN :
1057-7157
Type :
jour
DOI :
10.1109/JMEMS.2012.2194771
Filename :
6193401
Link To Document :
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