DocumentCode :
3560897
Title :
An On–Off Mode RTD Oscillator Operating at Extremely Low Power Consumption
Author :
Lee, Jooseok ; Lee, Jongwon ; Yang, Kyounghoon
Author_Institution :
Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea
Volume :
11
Issue :
5
fYear :
2012
Firstpage :
863
Lastpage :
865
Abstract :
A resonant tunneling diode (RTD)-based microwave on-off mode oscillator for on-off keying (OOK) transceiver applications operating at extremely low power consumption is proposed. In order to achieve the low-power operation, the negative differential conductance characteristic at a low-voltage arising from quantum effects of the RTD is used for RF signal generation. The fabricated integrated circuit of the RTD-based oscillator by using an InP-based RTD/heterojunction bipolar transistors quantum-effect IC technology shows low power consumption of 1.14 mW at an oscillation frequency of 5.725 GHz industrial, scientific, and medical band. The fabricated RTD-based oscillator operates in an on-off mode with a high data rate of 500 Mb/s. The obtained energy efficiency of 2.28 pJ/bit is found to be the best reported up to date.
Keywords :
III-V semiconductors; MMIC oscillators; amplitude shift keying; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; radio transceivers; resonant tunnelling diodes; InP; OOK transceiver; RF signal generation; RTD-heterojunction bipolar transistors; bit rate 500 Gbit/s; fabricated integrated circuit; frequency 5.725 GHz; industrial scientific and medical band; low power consumption; microwave on-off mode oscillator; negative differential conductance characteristic; on-off keying transceiver; on-off mode RTD oscillator; power 1.14 mW; quantum-effect IC technology; resonant tunneling diode; Energy efficiency; Heterojunction bipolar transistors; Oscillators; Power demand; Temperature measurement; Transmitters; Wireless communication; Microwave oscillators; negative resistance circuits; quantum effect semiconductor devices; resonant tunneling diode (RTD);
fLanguage :
English
Journal_Title :
Nanotechnology, IEEE Transactions on
Publisher :
ieee
Conference_Location :
5/4/2012 12:00:00 AM
ISSN :
1536-125X
Type :
jour
DOI :
10.1109/TNANO.2012.2197759
Filename :
6195021
Link To Document :
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