DocumentCode
3560953
Title
Effect of Oxygen Plasma Treatment on Characteristics of TiO 
Photodetectors
Author
Shih, W.S. ; Young, S.J. ; Ji, L.W. ; Water, W. ; Meen, T.H. ; Shiu, H.W.
Author_Institution
Inst. of Electro-Opt. & Mater. Sci., Nat. Formosa Univ., Yunlin, Taiwan
Volume
11
Issue
11
fYear
2011
Firstpage
3031
Lastpage
3035
Abstract
In this study, titanium dioxide (TiO2) films were prepared on Corning glass substrates by radio frequency (RF) magnetron sputtering and treated with different O2 plasma conditions, and then were used to fabricate metal-semiconductor-metal (MSM) ultraviolet (UV) photodetectors (PDs). The effects of the changes on TiO2 films were investigated by using field-emission scanning electron microscope (FE-SEM), photoluminescence (PL) system and four-point probe measurement. With a 360-nm illumination and 5 V applied bias, it was found that the responsivities of the fabricated TiO2 PDs with 0, 1, 2, and 3 min O2 plasma treatment were 36, 144, 153, and 53 A/W, respectively.
Keywords
field emission electron microscopes; metal-semiconductor-metal structures; photodetectors; photoluminescence; scanning electron microscopes; sputtering; titanium compounds; ultraviolet detectors; FE-SEM; MSMUVPD; PL system; RF magnetron sputtering; TiO2; corning glass substrate; field-emission scanning electron microscope; four-point probe measurement; metal-semiconductor-metal ultraviolet photodetector; oxygen plasma treatment; photoluminescence system; radiofrequency magnetron sputtering; voltage 5 V; Electron traps; Films; Plasmas; Semiconductor device measurement; Surface morphology; Surface treatment; Metal-semiconductor-metal (MSM); photodetectors (PDs); rf sputter; titanium dioxide (TiO$_{2}$
fLanguage
English
Journal_Title
Sensors Journal, IEEE
Publisher
ieee
Conference_Location
5/5/2011 12:00:00 AM
ISSN
1530-437X
Type
jour
DOI
10.1109/JSEN.2011.2150212
Filename
5762586
Link To Document