Title :
Low-Temperature Reflow Anneals of Cu on Ru
Author :
Yang, C.-C. ; McFeely, F.R. ; Li, B. ; Rosenberg, R. ; Edelstein, D.
Author_Institution :
IBM Res., Yorktown Heights, NY, USA
fDate :
6/1/2011 12:00:00 AM
Abstract :
Low-temperature reflow anneals of physical-vapor-deposited (PVD) Cu on Ru are achieved at a Cu/low-k integration-compatible low temperature of 250°C by surface diffusion. Feature-fill capability is also demonstrated in patterned features along with reasonable electrical measurements. As compared to typical impurity levels in the conventional electroplated Cu, the reflowed PVD Cu had higher purity, which then resulted in lower electrical resistance in the structures. Electromigration test results further confirmed the reliability of the reflowed-Cu/Ru interface.
Keywords :
annealing; electromigration; surface diffusion; vapour deposition; electrical resistance; electromigration test; low-temperature reflow anneals; physical-vapor-deposition; surface diffusion; temperature 250 degC; Annealing; Copper; Electrical resistance measurement; Integrated circuit interconnections; Reliability; Resistance; Substrates; Copper; electromigration (EM); ruthenium; surface diffusion;
Journal_Title :
Electron Device Letters, IEEE
Conference_Location :
5/5/2011 12:00:00 AM
DOI :
10.1109/LED.2011.2132691
