High- $k$ Gate Stack Properties in SON Transistor Given by Voltage and Temperature Dependence of Random Telegraph Signal

In this paper, we present measurements of the random telegraph signal (RTS) noise and the low-frequency (LF) noise in metal-oxide-semiconductor field-effect transistors (MOSFETs) integrated in silicon-on-nothing (SON) technology. This paper takes the identification of traps responsible for the drain-current fluctuations by RTS and LF techniques. We extracted the positions and the capture cross section and activation energies of oxide traps in the interfacial layer (SiO₂), as well as in the high-A; dielectric (HfO₂). Furthermore, it has been con vincingly shown that this discrete switching of the drain current between a high state and a low state is the basic feature responsible for the 1/f^γ flicker noise in SON MOSFETs.