Title :
A packaged. 2.3 GHz SiGe VCO with parallel-branch inductors
Author :
Ja-Yol Lee ; Dongwoo Suh ; Sang-Heung Lee ; Seung-Yun Lee ; Chan-Woo Park ; Sang Hoon Kim ; Kyu-Hwan Shim ; Jin-Young Kang ; Kyoung-Ik Cho ; Seung Hyeub Oh
Author_Institution :
SiGe Devices Team, Electron. & Telecommun. Res. Inst., South Korea
Abstract :
In this paper, a 2.3 GHz VCO with parallel-branch inductors was designed and fabricated using a 0.8-/spl mu/m SiGe HBT process technology. Their Q-factors were higher than those of the conventional inductors. A good phase noise of -122 dBc/Hz was measured at 4 MHz offset frequency, and harmonics were suppressed by -28 dBc. The manufactured VCO core consumed 3.7 mA at 2 V supply voltage, and the VCO occupied 1.8 mm /spl times/ 1.2 mm chip area.
Keywords :
Ge-Si alloys; MMIC oscillators; Q-factor; UHF integrated circuits; UHF oscillators; bipolar MMIC; bipolar analogue integrated circuits; heterojunction bipolar transistors; inductors; integrated circuit design; semiconductor materials; voltage-controlled oscillators; 1.2 mm; 1.8 mm; 2 V; 2.3 GHz; 3.7 mA; Q-factors; SiGe; SiGe HBT process technology; harmonics suppression; packaged SiGe VCO; parallel-branch inductors; phase noise; Frequency measurement; Germanium silicon alloys; Heterojunction bipolar transistors; Inductors; Noise measurement; Packaging; Phase noise; Q factor; Silicon germanium; Voltage-controlled oscillators;
Conference_Titel :
Microwave Symposium Digest, 2003 IEEE MTT-S International
Print_ISBN :
0-7803-7695-1
DOI :
10.1109/MWSYM.2003.1211054
