Title :
A fully integrated, single-chip handset power amplifier in SiGe BiCMOS for W-CDMA applications
Author :
Rippke, I. ; Duster, J. ; Kornegay, K.
Author_Institution :
Sch. of Electr. & Comput. Eng., Cornell Univ., Ithaca, NY, USA
Abstract :
A fully integrated, single-chip power amplifier has been designed to meet the requirements of W-CDMA mobile handsets. The circuit was designed in IBM´s 47 GHz f/sub T/ SiGe BiCMOS process with all passive components and matching circuits included on-chip. The design achieves 24 dBm output power with 30% PAE and excellent linearity. The power amplifier draws 42 mA of quiescent current from a 3.3 V source. The fabricated circuit occupies a die area of 1.8 mm/spl times/1.25 mm, offering at least 10x improvement in chip/board area over current designs, allowing for increased levels of transmitter integration.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; UHF power amplifiers; code division multiple access; integrated circuit design; integrated circuit measurement; integrated circuit modelling; mobile handsets; semiconductor materials; 1.25 mm; 1.8 mm; 1.92 to 1.98 GHz; 3.3 V; 30 percent; 42 mA; 47 GHz; SiGe; SiGe BiCMOS single-chip handset power amplifiers; W-CDMA mobile handsets; amplifier output power/linearity; chip/board area improvement; on-chip passive components/matching circuits; transmitter integration; BiCMOS integrated circuits; Germanium silicon alloys; Linearity; Mobile handsets; Multiaccess communication; Power amplifiers; Power generation; Silicon germanium; Telephone sets; Transmitters;
Conference_Titel :
Microwave Symposium Digest, 2003 IEEE MTT-S International
Print_ISBN :
0-7803-7695-1
DOI :
10.1109/MWSYM.2003.1211057
