Title :
Reduction of operating voltage in organic transistor and CMOS circuit utilizing high-k dielectric
Author :
Toan Thanh Dao ; Huyen Thanh Pham
Author_Institution :
Fac. of Electr.-Electron. Eng., Univ. of Transp. & Commun., Hanoi, Vietnam
Abstract :
Employment of high-k dielectric is one of the most important strategies to reduce operating voltage of an integrated circuit. This paper demonstrates experiments on organic FET and CMOS circuit where the dielectric layer was constructed of P(VDF-TrFE) and PS polymer dielectric. The dielectric constant of compound dielectric increased about three times in comparison with that of pristine PS. This contributes into lowering the operating voltage transistor circuit. The experimental results indicated that high-k dielectric of P(VDF-TrFE) and PS may be suitable for flexible low-power organic electronics.
Keywords :
CMOS integrated circuits; MOSFET; dielectric materials; low-power electronics; organic field effect transistors; polymers; CMOS integrated circuit; P(VDF-TrFE); PS polymer dielectric; dielectric layer; high-k dielectric constant; low-power organic electronics; operating voltage transistor circuit; organic FET; organic transistor; Artificial intelligence; CMOS integrated circuits; Equations; Logic gates; Manufacturing; Substrates; Transistors; CMOS inverter; High-k polymer dielectric; OFET; flexible electronics; threshold voltage;
Conference_Titel :
Advanced Technologies for Communications (ATC), 2014 International Conference on
Print_ISBN :
978-1-4799-6955-5
DOI :
10.1109/ATC.2014.7043416