DocumentCode
3562682
Title
Red shift of optical band gap in ZnO doped with K synthesized by solution combustion technique
Author
Krithiga, R. ; Sankar, S. ; Subhashree, G.
Author_Institution
Dept. of Phys., Anna Univ., Chennai, India
fYear
2014
Firstpage
1
Lastpage
4
Abstract
This is a chronicle of the sol-gel auto combustion synthesis of ZnO: K nano grains along with the structural and optical properties. The XRD patterns confirm the substitution of K atoms into ZnO lattice. The grain size, lattice constants and volume are estimated from the XRD patterns. The morphology of the samples are imaged by SEM. The EDAX analysis shows no impurity. The Raman analysis reveals the life time of phonons. The strain and stress induced are detected from Raman analysis. The band gap of the samples estimated from absorption spectra show a red shift for the K doped ZnO.
Keywords
II-VI semiconductors; Raman spectra; X-ray chemical analysis; X-ray diffraction; combustion synthesis; crystal growth from solution; crystal morphology; energy gap; grain size; infrared spectra; lattice constants; nanofabrication; nanostructured materials; optical constants; phonons; potassium; red shift; scanning electron microscopy; semiconductor growth; sol-gel processing; ultraviolet spectra; visible spectra; wide band gap semiconductors; zinc compounds; EDAX; Raman analysis; SEM; UV-vis-NIR absorption spectra; XRD; ZnO:K; grain size; lattice constants; nanograins; optical band gap; optical properties; phonon lifetime; red shift; sol-gel autocombustion synthesis; solution combustion technique; structural properties; Grain size; Lattices; Phonons; Photonic band gap; X-ray scattering; Zinc oxide; XRD; ZnO; band gap; morphology; optical analysis;
fLanguage
English
Publisher
ieee
Conference_Titel
Science Engineering and Management Research (ICSEMR), 2014 International Conference on
Print_ISBN
978-1-4799-7614-0
Type
conf
DOI
10.1109/ICSEMR.2014.7043639
Filename
7043639
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