DocumentCode
3563982
Title
Dependence of oxidation process on various oxidizing conditions
Author
Prashant, Kumar ; Dhavse, Rasika ; Mishra, Vivekanand
Author_Institution
Electron. Eng. Deptt., SVNIT, Surat, India
fYear
2014
Firstpage
1
Lastpage
4
Abstract
This paper analyses effect of various parameters like temperature, oxidizing species, crystallographic orientation of wafer and time on thickness of oxide grow on a p type silicon. The process of oxidization is modeled by using a numeric solver that works on finite element technique. It is useful to model and compare kinetics of thermal oxidation for both thin and thick oxide films.
Keywords
elemental semiconductors; finite element analysis; oxidation; semiconductor thin films; silicon; thick films; Si; crystallographic orientation; finite element technique; numeric solver; p type silicon; thermal oxidation process; thick oxide film; thin oxide film; Integrated circuit modeling; Kinetic theory; Numerical models; Oxidation; Semiconductor device modeling; Silicon; Silicon compounds; MOS Devices; Modeling and Simulation; Oxidation Kinetics; Silicon Dioxide; Thermal Oxidation;
fLanguage
English
Publisher
ieee
Conference_Titel
Emerging Technology Trends in Electronics, Communication and Networking (ET2ECN), 2014 2nd International Conference on
Print_ISBN
978-1-4799-6985-2
Type
conf
DOI
10.1109/ET2ECN.2014.7044945
Filename
7044945
Link To Document