Title :
Static performance analysis on UTB-SG and DG MOSFETs with Si and III–V channel materials
Author :
Singh, D. ; Panda, S. ; Mohapatra, S.K. ; Pradhan, K.P. ; Sahu, P.K.
Author_Institution :
Dept. of Electr. Eng., Nat. Inst. of Technol. (NIT), Rourkela, India
Abstract :
Using 2-D numerical device simulator, the electrostatic performances are analysed for both ultrathin body (UTB) single gate (SG) and double gate (DG) MOSFETs. Various short channel parameters like subthreshold slope (SS), Ion/Ioff ratio, and drain induced barrier lowering (DIBL), are investigated by varying the process parameters i.e. channel length (Lg), and doping concentration (NA). From our results, UTB-DG MOSFET has better immunization to short channel effects (SCEs) than its counterpart SG configuration. Further investigation has made by using high mobility materials (GaAs, In0.53Ga0.47As) in DG MOSFET and found a great improvement in DIBL, drive current over Si.
Keywords :
III-V semiconductors; MOSFET; carrier mobility; elemental semiconductors; gallium arsenide; indium compounds; semiconductor device models; semiconductor doping; silicon; 2D numerical device simulator; DG MOSFETs; GaAs; In0.53Ga0.47As; Si; UTB-SG; channel length; channel materials; doping concentration; double gate MOSFET; drain induced barrier lowering; high mobility materials; process parameters; short channel parameters; single gate MOSFET; static performance analysis; subthreshold slope; ultrathin body MOSFET; Electrostatics; Gallium arsenide; Indium gallium arsenide; Logic gates; MOSFET; Silicon; Substrates; DIBL; SCEs; SS; double gate (DG); high mobility materials; on-off ratio; ultrathin body (UTB);
Conference_Titel :
High Performance Computing and Applications (ICHPCA), 2014 International Conference on
Print_ISBN :
978-1-4799-5957-0
DOI :
10.1109/ICHPCA.2014.7045365
