DocumentCode
3564467
Title
Sapphire-based capacitance diaphragm gauge for high temperature applications
Author
Ishihara, T. ; Sekine, M. ; Ishikura, Y. ; Kimura, S. ; Harada, H. ; Nagata, M. ; Masuda, T.
Author_Institution
Micro Device Center, Yamatake Corp., Japan
Volume
1
fYear
2005
Firstpage
503
Abstract
The packaging technologies for an entirely sapphire-based capacitive pressure sensor chip have been developed. This sensor, capable of withstanding 200°C of self-heating temperature, covers a dynamic absolute pressure range from 0 to 133 Pa, 0 to 1,333 Pa, or 0 to 13 kPa. By adopting interlayer-less bonding methods, the packaging technology features low mechanical stress from the exterior metal body to the sensor chip and high corrosion resistance. The pressure performance of this packaged sensor corresponds well to the calculated values. In respect to reliability, zero drifts after one hundred 100-200°C heat cycles and after one thousand 300 kPa overpressure cycles are both less than 0.1 %FS.
Keywords
capacitive sensors; diaphragms; electronics packaging; pressure sensors; sapphire; 0 to 13 kPa; 0 to 133 Pa; 0 to 1333 Pa; 100 to 200 C; 300 kPa; capacitive pressure sensor chip; corrosion resistance; dynamic absolute pressure range; high temperature applications; interlayer-less bonding methods; mechanical stress; packaging technology; reliability; sapphire-based capacitance diaphragm gauge; self-heating temperature; Bonding; Capacitance; Capacitive sensors; Dynamic range; Mechanical sensors; Packaging; Sensor phenomena and characterization; Stress; Temperature distribution; Temperature sensors;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05. The 13th International Conference on
Print_ISBN
0-7803-8994-8
Type
conf
DOI
10.1109/SENSOR.2005.1496464
Filename
1496464
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