Phase-change material for reconfigurability in THz band

Author

Sanphuang, Varittha ; Ghalichechian, Nima ; Nahar, Niru K. ; Volakis, John L.

Author_Institution

Electr. & Comput. Eng. Dept., Ohio State Univ., Columbus, OH, USA

fYear

2014

Firstpage

319

Lastpage

320

Abstract

We propose phase-change materials (PCMs) to demonstrate the reconfigurablility of THz filter. Here vanadium dioxide (VO₂) is studied since it shows insulator-to-metal transition properties at temperature of 70 °C. A broadband ON/OFF filter using frequency selective surfaces (FSS) integrated with VO₂ is designed to improve selectivity of THz sensing devices. Simulation and measurement results show an excellent agreement in frequency range of 0.1 - 1 THz. Transmission is centered around 0.55 THz below 70 °C and is cut off when the filter is heated above 70 °C. Therefore, ON/OFF switching in filters is achieved by employing VO₂.

Keywords

frequency selective surfaces; microwave filters; phase change materials; terahertz wave devices; vanadium compounds; THz filter; THz sensing devices; VO₂; broadband ON/OFF filter; frequency 0.1 THz to 1 THz; frequency selective surfaces; insulator-to-metal transition properties; phase-change material; temperature 70 C; Band-pass filters; Films; Filtering theory; Frequency selective surfaces; Microwave filters; Phase change materials; Frequency Selective Surface (FSS); Terahertz (THz); filter; metamaterial; phase-change materials (PCMs); sensor;

fLanguage

English

Publisher

ieee

Conference_Titel

Aerospace and Electronics Conference, NAECON 2014 - IEEE National

Print_ISBN

978-1-4799-4690-7

Type

conf

DOI

10.1109/NAECON.2014.7045827

Filename

7045827