• DocumentCode
    3564577
  • Title

    Effects of non-ionizing radiation on a 130 nm CMOS SRAM for low earth orbit applications

  • Author

    Allen, Christopher I. ; Petrosky, J.C. ; Orlando, P. Len

  • Author_Institution
    Air Force Inst. of Technol. (AFIT), Dayton, OH, USA
  • fYear
    2014
  • Firstpage
    351
  • Lastpage
    356
  • Abstract
    This research predicts the effects of the natural radiation environment in low earth orbit on a 6T SRAM cell designed using the CMOS portion of a 130 nm BiCMOS technology. It is determined that this technology is quite sensitive to single event upset (SEU): at 200 km altitude and without shielding, the predicted SEU rate is 6.7×10-3 bit-1yr-1; at 2000 km altitude, the rate increases to 1.9×101 bit-1yr-1. Nonetheless, these results compare favorably to previously published SEU data [1], [2] regarding the bipolar portion of similar BiCMOS technology.
  • Keywords
    BiCMOS integrated circuits; SRAM chips; radiation hardening (electronics); 6T SRAM cell; BiCMOS technology; CMOS SRAM; SEU; distance 200 km; distance 2000 km; low earth orbit; natural radiation environment; nonionizing radiation; single event upset; size 130 nm; CMOS integrated circuits; CMOS technology; Cosmic rays; Protons; Random access memory; Single event upsets; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Aerospace and Electronics Conference, NAECON 2014 - IEEE National
  • Print_ISBN
    978-1-4799-4690-7
  • Type

    conf

  • DOI
    10.1109/NAECON.2014.7045835
  • Filename
    7045835
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3564577