• DocumentCode
    3565028
  • Title

    High voltage silicon based devices for energy efficient power distribution and consumption

  • Author

    Kopta, A.

  • Author_Institution
    ABB Switzerland Ltd., Lenzburg, Switzerland
  • fYear
    2014
  • Abstract
    This paper gives an overview of future requirements and recent progress of silicon based semiconductor devices for very high power applications. The first part provides an outline of future trends in the areas of power transmission and power consumption and the resulting requirements on device design and performance. The second part elaborates on the recent advances of bipolar power devices and the corresponding packaging technologies used in these high power applications.
  • Keywords
    distribution networks; elemental semiconductors; energy conservation; power consumption; power semiconductor devices; semiconductor device packaging; silicon; transmission networks; Si; bipolar power device; energy efficient power consumption; energy efficient power distribution; high voltage silicon based semiconductor device; packaging technology; power transmission; HVDC transmission; Insulated gate bipolar transistors; Logic gates; Reliability; Silicon; Thyristors; Topology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2014 IEEE International
  • Type

    conf

  • DOI
    10.1109/IEDM.2014.7046966
  • Filename
    7046966