Title :
Heterogeneously integrated sub-40nm low-power epi-like Ge/Si monolithic 3D-IC with stacked SiGeC ambient light harvester
Author :
Chang-Hong Shen ; Jia-Min Shieh ; Wen-Hsien Huang ; Tsung-Ta Wu ; Chien-Fu Chen ; Ming-Hsuan Kao ; Chih-Chao Yang ; Chein-Din Lin ; Hsing-Hsiang Wang ; Tung-Ying Hsieh ; Bo-Yuan Chen ; Guo-Wei Huang ; Meng-Fan Chang ; Fu-Liang Yang
Author_Institution :
Nat. Nano Device Labs., Hsinchu, Taiwan
Abstract :
For the first time, we report heterogeneously integrated sub-40nm epi-like Ge/Si monolithic 3D-IC with low-power logic/NVM circuits and efficient photovoltaic energy harvester. Threshold voltage engineering and driving current boosting technologies enable stackable Ge/Si UTB (<;15nm) MOSFETs, CMOS inverter and SRAM (SNM=270mV@0.7V) achieve low operation voltage. Stackable 1-T NVM with high speed (100ns) and low driving-voltage operation provide power-off storage while SRAM serve as power-on working memory. 100% aperture ratio SiGeC ambient light energy harvester with maximum output power of 7mW/cm2 layered on the monolithic 3D-IC chip envisions a self-powered monolithic 3D-IC technology for advanced low-power wire-less sensor networks, wearable devices, and devices for Internet of Things.
Keywords :
CMOS logic circuits; Ge-Si alloys; MOSFET; SRAM chips; energy harvesting; low-power electronics; three-dimensional integrated circuits; CMOS inverter; Internet of Things; SRAM; SiGeC; advanced low-power wireless sensor networks; driving current boosting technology; heterogeneously-integrated low-power epi-like germanium-silicon monolithic 3D-IC; low-driving-voltage operation; low-operation voltage; low-power logic-NVM circuits; photovoltaic energy harvester; power-off storage; power-on working memory; self-powered monolithic 3D-IC technology; size 40 nm; stackable NVM; stackable UTB MOSFET; stacked ambient light energy harvester; threshold voltage engineering; wearable devices; CMOS integrated circuits; Logic gates; MOSFET; Nonvolatile memory; Random access memory; Silicon; Voltage control;
Conference_Titel :
Electron Devices Meeting (IEDM), 2014 IEEE International
DOI :
10.1109/IEDM.2014.7046975
