Three-dimensional integrated CMOS image sensors with pixel-parallel A/D converters fabricated by direct bonding of SOI layers

Author

Goto, Masahide ; Hagiwara, Kei ; Iguchi, Yoshinori ; Ohtake, Hiroshi ; Saraya, Takuya ; Kobayashi, Masaharu ; Higurashi, Eiji ; Toshiyoshi, Hiroshi ; Hiramoto, Toshiro

Author_Institution

NHK Sci. & Technol. Res. Labs., Tokyo, Japan

fYear

2014

Abstract

We report the first demonstration of three-dimensional (3D) integrated CMOS image sensors with pixel-parallel A/D converters (ADCs). Photodiode (PD) and inverter layers were directly bonded with the damascened Au electrodes to provide each pixel with in-pixel A/D conversion. We designed ADC with a pulse frequency output and fabricated a prototype sensor with 64 pixels. The developed sensor successfully captured video images and confirmed excellent linearity with a wide dynamic range of more than 80 dB, which showed feasibility of pixel-level 3D integration for high-performance CMOS image sensors.

Keywords

CMOS image sensors; analogue-digital conversion; gold; photodiodes; three-dimensional integrated circuits; 3D integrated CMOS image sensors; ADC; Au; damascened Au electrodes; high-performance CMOS image sensors; in-pixel A-D conversion; inverter layers; photodiode; pixel-level 3D integration; pixel-parallel A-D converters; pulse frequency output; three-dimensional integrated CMOS image sensors; CMOS image sensors; Dynamic range; Electrodes; Gold; Inverters; Lighting; Three-dimensional displays;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2014 IEEE International

Type

conf

DOI

10.1109/IEDM.2014.7046980

Filename

7046980